Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; MALOBABIC, Slavica et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1669-1672, issn 0018-9383, 4 p.Article

Bidirectional Devices for Automotive-Grade Electrostatic Discharge ApplicationsSALCEDO, Javier A; HAJJAR, Jean-Jacques; MALOBABIC, Slavica et al.IEEE electron device letters. 2012, Vol 33, Num 6, pp 860-862, issn 0741-3106, 3 p.Article

Analysis of Safe Operating Area of NLDMOS and PLDMOS Transistors Subject to Transient StressesMALOBABIC, Slavica; SALCEDO, Javier A; HAJJAR, Jean-Jacques et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2655-2663, issn 0018-9383, 9 p.Article

A review of core compact models for undoped double-gate SOI MOSFETsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; MUCI, Juan et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 1, pp 131-140, issn 0018-9383, 10 p.Article

Correlation of Human Metal Model and Transmission Line Pulsing TestingMALOBABIC, Slavica; SALCEDO, Javier A; RIGHTER, Alan W et al.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1200-1202, issn 0741-3106, 3 p.Article

Modeling the Undoped-Body Symmetric Dual-Gate MOSFETMALOBABIC, Slavica; ORTIZ-CONDE, Adelmo; GARCIA SANCHEZ, Francisco J et al.IEEE International Caracas Conference on Devices, Circuits, and Systems. 2004, pp 19-25, isbn 0-7803-8777-5, 1Vol, 7 p.Conference Paper

NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal ApplicationsMALOBABIC, Slavica; SALCEDO, Javier A; HAJJAR, Jean-Jacques et al.IEEE electron device letters. 2012, Vol 33, Num 11, pp 1595-1597, issn 0741-3106, 3 p.Article